Type of Document	Thesis
Author	Oyler, Ryan
Author's Email Address	royler@chem.fsu.edu
URN	etd-11082008-115608
Title	Localization of S2- in CdSSe Nanocrystals
Degree	Master of Science
Department	Chemistry and Biochemistry, Department of
Advisory Committee	Advisor Name Title Geoffrey F. Strouse Committee Chair Oliver Steinbock Committee Member Sanford Safron Committee Member
Keywords	Nanocrystals CdSSe Quantum Dots
Date of Defense	2008-10-28
Availability	unrestricted
Abstract The development of ternary nanoscale materials with controlled cross-sectional doping is an important step in the use of chemically prepared quantum dots for nanoscale engineering applications. We report cross-sectional, elemental doping for the formation of an alloyed CdSSe nanocrystal. The nanocrystal is prepared from the thermal decomposition of Li4[Cd10Se4(SPh)16]. The sulfur incorporation arises from a surface mediated degradation of a [Cd(SPh)4]2- tetrahedral passivant tightly bound to the growing quantum dot surface. In the alloy, we identify a pure CdSe nucleus of ~ 1.5 nm consistent with the predictions of nucleation theory. As the particle grows, S2- incorporation increases until ~3.5 nm, at which point an equilibrium of the S2-/Se2- incorporation rate is attained. The use of molecular clusters to allow controlled defect ion incorporation can open new pathways to more complex nanomaterials.
Files	Filename       Size       Approximate Download Time (Hours:Minutes:Seconds)     28.8 Modem   56K Modem   ISDN (64 Kb)   ISDN (128 Kb)   Higher-speed Access    OylerRThesis.pdf 6.04 Mb 00:27:57 00:14:22 00:12:34 00:06:17 00:00:32